The Rohm Semiconductor RW1C025ZP is a MOSFET designed for surface mount applications.

• Polarity: P-channel
• Power Dissipation (Max): 700mW (Ta)
• Package: Reel
• Mounting: SMD (SMT) technology
• Drive Voltage (max Rds On, min Rds On): 1.5V, 4.5V
• ECCN: EAR99
• Supply and Demand Status: Balanced
• Temperature Range: 150°C (TJ)
• Case/Package: 6-WEMT
• Dimension: SOT-563, SOT-666
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current @ 25°C: 2.5A (Ta)
• Gate-Source Threshold Voltage: 1V @ 1mA
• Max Gate Charge: 21nC @ 4.5V
• Max Input Capacitance: 1300pF @ 10V
• Maximum Gate-Source Voltage: ±10V
• Maximum Rds On @ Id,Vgs: 65 mOhm @ 2.5A, 4.5V