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Same model may have multiple batches, images only for reference.
RXH125N03TB1 Real Image
Same model may have multiple batches, images only for reference.

RXH125N03TB1

Part No RXH125N03TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A 8SOIC
Datasheet
RXH125N03TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 12.7nC @ 5V
Max Input Capacitance 1000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1093145-RXH125N03TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RXH125N03TB1 CAD Model

Description

The RXH125N03TB1 is an active discrete semiconductor product manufactured by Rohm Semiconductor.

  • Channel Type: N-channel MOSFET
  • Maximum Power Dissipation: 2W (Ta)
  • Package: 8-SOP
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 12.5A (Ta)
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6823 $57.9955
210+ $0.5599 $117.5790
320+ $0.5424 $173.5680
445+ $0.5248 $233.5360
570+ $0.5074 $289.2180
765+ $0.4548 $347.9220
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Availability: 2,490 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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