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RYM002N05T2CL

Part No RYM002N05T2CL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 0.2A VMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0.9V, 4.5V
Gate-Source Threshold Voltage 800mV @ 1mA
Max Input Capacitance 26pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VMT3
Dimension SOT-723
Win Source Part Number 106297-RYM002N05T2CL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RYM002N05T2CL CAD Model

Description

The 106297-RYM002N05T2CL is a high-performance N-Channel transistor designed for use in a variety of electronic applications from Rohm Semiconductor.

  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 200mA (Ta)
  • Maximum Rds On @ Id,Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 800mV @ 1mA
  • Maximum Input Capacitance: 26pF @ 10V
  • Package: VMT3
  • Dimension: SOT-723
  • Market: open
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
540+ $0.0930 $50.2200
1,150+ $0.0871 $100.1650
1,785+ $0.0842 $150.2970
2,555+ $0.0783 $200.0565
3,325+ $0.0753 $250.3725
4,145+ $0.0724 $300.0980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 104,980 pieces
MOQ: 540 pcs
Order Increment : 1 pcs
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