The SCS210AGHRC is a silicon carbide (SiC) Schottky barrier diode from Rohm Semiconductor. This diode is engineered to deliver superior performance in power electronics applications, capitalizing on the inherent benefits of SiC technology such as high voltage capability, fast switching speed, and low reverse recovery losses.

Applications:

• Power Factor Correction (PFC) circuits
• Motor drive inverters
• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Electric Vehicle (EV) charging stations

Features:

• Silicon Carbide (SiC) material for superior performance
• Zero reverse recovery current
• High surge current capability
• High-speed switching
• High blocking voltage

Benefits:

• Increased system efficiency due to minimal switching losses.
• Reduced EMI (Electromagnetic Interference) because of the absence of reverse recovery current.
• Improved system reliability due to high surge current handling capabilities.
• Smaller and lighter power electronics designs due to high-frequency operation.
• Reduced cooling requirements due to higher efficiency and lower heat generation.

Technical Specifications:

The SCS210AGHRC typically features a repetitive peak reverse voltage (VRRM) of 650V and a continuous forward current (IF) of 10A. The forward voltage (VF) is typically around 1.5V at the rated forward current. The device has a junction temperature range typically from -55°C to +175°C. It is commonly available in a TO-220 package. The SiC material provides significantly lower switching losses compared to traditional silicon diodes. The absence of reverse recovery charge (Qrr) is a significant advantage in high-frequency applications.