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Same model may have multiple batches, images only for reference.
SCT2280KEC Real Image
Same model may have multiple batches, images only for reference.

SCT2280KEC

Part No SCT2280KEC
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 1200V 14A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Maximum) at Id, Vgs 364mOhm at 4A, 18V
Vgs(th) (Maximum) at Id 4V at 1.4mA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 18V
Maximum Vgs +22V, -6V
Input Capacitance (Ciss) (Maximum) at Vds 667pF at 800V
Power Dissipation (Maximum) 108W (Tc)
Temperature Range - Operating 175°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 360
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813653-SCT2280KEC
Ultra Librarian 3D Model Ultra Librarian SCT2280KEC CAD Model

Description

The SCT2280KEC is an N-channel SiCFET (Silicon Carbide) electronic component manufactured by Rohm Semiconductor.

  • Supply and Demand Status: Limited
  • Package: TO-247
  • Maximum Power Dissipation @ Tc: 108W
  • Maximum Drain to Source Voltage: 1200V

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