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Same model may have multiple batches, images only for reference.
SCT3030KLGC11 Real Image
Same model may have multiple batches, images only for reference.

SCT3030KLGC11

Part No SCT3030KLGC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SCT3030KLGC11 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs 131 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2222 pF @ 800 V
Power Dissipation (Max) 339W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3030
Standard Package 450
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278199-SCT3030KLGC11
Ultra Librarian 3D Model Ultra Librarian SCT3030KLGC11 CAD Model

Description

The 1278199-SCT3030KLGC11 is a silicon carbide N-channel FET with a drain to source voltage of 1200V and continuous drain current of 72A @ 25°C.

  • Maximum On-Resistance: 39mOhm @ 27A and 18V
  • Maximum Gate Charge: 131nC @ 18V
  • Package Type: through-hole TO-247-3
  • Supplier Device Package: TO-247N
  • SCT3030 FET series: Maximum drive voltage of 18V
  • Temperature Range: 175°C (TJ)
  • Power Dissipation: 339W (Tc)
  • Low Input Capacitance: 2222pF @ 800V
  • RoHS Compliant: Yes
  • REACH Status: Unaffected

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