The SH8J66TB1 is an electronic component manufactured by Rohm Semiconductor.

• Type: It is a 2 P-Channel (Dual) MOSFET with a logic level gate.
• Applications: used for various applications in electronic circuits.
• Availability: The supply and demand status is balanced.
• Maximum Power Dissipation: 2W.
• Drain-Source Breakdown Voltage: 30V.
• Continuous Drain Current: 9A @ 25°C.
• Gate-Source Threshold Voltage: 2.5V @ 1mA.
• Maximum Gate Charge: 35nC @ 5V.
• Maximum Input Capacitance: 3000pF @ 10V.
• Maximum Rds On: 18.5 mOhm @ 9A, 10V.
• Package: 8-SOP package.
• Operating Temperature: -150°C to +150°C.