The SH8K22TB1 is an electronic component manufactured by Rohm Semiconductor.

• Category: It is part of the discrete semiconductor products category and is not for new designs.
• Availability: the supply and demand status is balanced, making it readily available for purchase.
• Type: This component is a 2 N-channel (dual) FET with logic level gate feature.
• Maximum Power Dissipation: 2W.
• Drain-Source Breakdown Voltage: 45V.
• Continuous Drain Current: 4.5A @ 25°C.
• Gate-Source Threshold Voltage: 2.5V @ 1mA.
• Max Gate Charge: 9.6nC @ 5V.
• Max Input Capacitance: 550pF @ 10V.
• Maximum Rds On: 46 mOhm @ 4.5A, 10V.