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SH8K32TB1 Real Image1 SH8K32TB1 Real Image2
Same model may have multiple batches, images only for reference.
SH8K32TB1 Real Image1 SH8K32TB1 Real Image2
SH8K32TB1 Real Image1 SH8K32TB1 Real Image2
Same model may have multiple batches, images only for reference.

SH8K32TB1

Part No SH8K32TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 4.5A SOP8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 65 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 500pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.0x6.0)
Win Source Part Number 1095647-SH8K32TB1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SH8K32TB1 CAD Model

Description

The SH8K32TB1 is a dual N-channel FET component manufactured by Rohm Semiconductor.

  • Channel Type: Dual N-channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (at 25°C): 4.5A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Rds On (Max) at Id,Vgs: 65 mOhm @ 4.5A, 10V
  • Power Dissipation (Max): 2W
  • Gate Charge (Max): 10nC @ 5V
  • Input Capacitance (Max): 500pF @ 10V
  • Packaging: Reel
  • Package: 8-SOP (5.0x6.
  • Status: Not for New Designs
  • Supply and Demand: Sufficient
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2674 $52.1502
48+ $2.1239 $101.9472
74+ $2.0521 $151.8554
105+ $1.9086 $200.4030
137+ $1.8369 $251.6553
170+ $1.7651 $300.0670
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Availability: 15,000 pieces
MOQ: 23 pcs
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