The Rohm Semiconductor SH8M13GZETB is a N and P-Channel FET type electronic component that is used in power management.

• FET Type: N and P-Channel
• Application: Power Management
• Drain-Source Breakdown Voltage: 30V
• Power Dissipation (Max): 2W
• Continuous Drain Current: 6A or 7A @ 25°C
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Gate Charge (Max): 18nC @ 5V
• Input Capacitance (Max): 1200pF @ 10V
• Rds On (Max): 29 mOhm @ 7A and 10V
• Packaging: Reel
• Mounting Type: Surface Mount
• Popularity: Medium
• Supply and Demand: Balanced