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Same model may have multiple batches, images only for reference.
SP8M4FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8M4FU6TB

Part No SP8M4FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 9A/7A 8SOIC
Datasheet
SP8M4FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A, 7A
Maximum Rds On at Id,Vgs 18 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1190pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 132626-SP8M4FU6TB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SP8M4FU6TB CAD Model

Description

The SP8M4FU6TB is a semiconductor product manufactured by Rohm Semiconductor.

  • FET Feature: Logic level gate
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A and 7A @ 25C

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Quantity Unit Price Ext. Price
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39+ $2.9732 $115.9548
61+ $2.8803 $175.6983
83+ $2.7874 $231.3542
108+ $2.6944 $290.9952
144+ $2.4157 $347.8608
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Availability: 10,300 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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