The Rohm Semiconductor SP8M70TB1 is a standard N and P-channel FET that is designed for use in various electronic applications.

• Drain-Source Breakdown Voltage: 250V
• Continuous Drain Current @ 25°C: 3A or 2.5A
• Gate-Source Threshold Voltage @ 1mA: 4V
• Maximum Gate Charge @ 10V: 5.2nC
• Maximum Input Capacitance @ 25V: 180pF
• Maximum Rds On @ Id,Vgs: 1.63 Ohm @ 1.5A, 10V
• Product Category: Discrete Semiconductor Products
• Status: Not for new designs
• Operating Temperature Range: 150°C (TJ)
• Case/Package: 8-SOP
• Applications: Wireless, computers & computer peripherals, portable devices, power management, audio, and consumer electronics