The SSTA06HZGT116 is a bipolar NPN transistor manufactured by Rohm Semiconductor.

• Maximum Power: 200 mW
• Voltage - Collector Emitter Breakdown (max): 80V
• Maximum Collector Current (Ic): 500 mA
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA (ICBO)
• DC Current Gain (hFE) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Frequency Transition: 100MHz
• Package: TO-236-3, SC-59, SOT-23-3 case
• Supplier Device Package: SST3
• Operating Temperature: 150°C (TJ)
• RoHS Compliant: Yes
• Alternative Parts (Cross-Reference): None available