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TT8J11TCR

Part No TT8J11TCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 3.5A TSST8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 43 mOhm @ 3.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 2600pF @ 6V
Maximum Power Dissipation 650mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSST
Win Source Part Number 1114851-TT8J11TCR
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian TT8J11TCR CAD Model

Description

The 432371 is a P-Channel dual FET with a drain-source breakdown voltage of 12V by Rohm Semiconductor.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current (25°C): 3.5A
  • Gate Type: Logic Level
  • Drive Voltage: 1.5V
  • Maximum Power Dissipation: 650mW
  • Maximum Rds on: 43 mOhm @ 3.5A, 4.5V
  • Maximum Gate Charge: 22nC @ 4.5V
  • Package: 8-TSST
  • Maximum Operating Temperature: 150°C
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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