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Same model may have multiple batches, images only for reference.
UMB1N Rohm Semiconductor
Same model may have multiple batches, images only for reference.

UMB1N

Part No UMB1N
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP UMT6
Datasheet
UMB1N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 56 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 043443-UMB1N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UMB1N CAD Model

Description

The Rohm Semiconductor 043443-UMB1N is a PNP pre-biased dual transistor designed for discrete semiconductor products.

  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 56 @ 5mA and 5V
  • Collector Cut-Off Current: 500nA
  • Maximum Power Dissipation: 150mW
  • Vce (sat): 300mV @ 500μA and 10mA
  • Package: UMT6 package
  • Popularity: medium.
  • Recommendation: not recommended for new designs
  • Supply: reel.

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