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UMG6NTR

Part No UMG6NTR
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS 2NPN PREBIAS 0.15W UMT5  /  Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting SMD (SMT)
Package / Case 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package UMT5
Base Product Number UMG6
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 988304-UMG6NTR
Ultra Librarian 3D Model Ultra Librarian UMG6NTR CAD Model

Description

The 988304-UMG6NTR is a pre-biased dual NPN bipolar transistor array designed for use in a wide range of applications.

  • Power Rating: 150mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Collector Current: 100mA
  • DC Current Gain: 100 @ 1mA and 5V
  • Package: 5-TSSOP, SC-70-5, SOT-353
  • Packaging: Tape and reel

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