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UMT4401U3T106

Part No UMT4401U3T106
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 40V 0.6A UMT3  /  Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 200 mW Surface Mount UMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V
Power - Max 200 mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package UMT3
Base Product Number UMT4401
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 846-UMT4401U3T106TR,846-UMT4401U3T106CT,846-UMT4401U3T106DKR
Standard Package 3,000
Win Source Part Number 1102338-UMT4401U3T106
Ultra Librarian 3D Model Ultra Librarian UMT4401U3T106 CAD Model

Description

The UMT4401U3T106 from Rohm Semiconductor is an NPN transistor with a maximum power of 200mW and a voltage-collector emitter breakdown of 40V.

  • Manufacturer: Rohm Semiconductor
  • Component: UMT4401U3T106
  • Type: NPN Transistor
  • Maximum Power: 200mW
  • Voltage-Collector Emitter Breakdown: 40V
  • Current-Collector Cutoff: 100nA
  • DC Current Gain: 100 @ 150mA and 1V
  • Frequency Transition: 250MHz
  • Packaging: Tape and Reel
  • Standard Package: 3,000
  • Package/Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
  • Operating Temperature: 150°C

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