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US6K1TR

Part No US6K1TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 1.5A TUMT6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 240 mOhm @ 1.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 2.2nC @ 4.5V
Max Input Capacitance 80pF @ 10V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT6
Win Source Part Number 043495-US6K1TR
Family Name US6K1
Introduction Date December 19, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian US6K1TR CAD Model

Description

The Rohm Semiconductor US6K1TR is a 2 N-Channel (Dual) logic level gate FET suitable for use in discrete semiconductor products.

  • Mounting Type: SMD (SMT)
  • Case/Package: TUMT6
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A @ 25°C
  • Maximum Power Dissipation: 1W
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Maximum Rds On @ Id,Vgs: 240 mOhm @ 1.5A, 4.5V
  • Estimated EOL date: 2026
  • Compliance: halogen-free regulations
  • Part Status: common-used
  • Popularity: high
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.1792 $50.1760
685+ $0.1470 $100.6950
1,055+ $0.1424 $150.2320
1,455+ $0.1378 $200.4990
1,880+ $0.1332 $250.4160
2,515+ $0.1195 $300.5425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 242 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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