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Same model may have multiple batches, images only for reference.
US6K4TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

US6K4TR

Part No US6K4TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.5A TUMT6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 180 mOhm @ 1.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 110pF @ 10V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT6
Win Source Part Number 118647-US6K4TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian US6K4TR CAD Model

Description

The US6K4TR is a high-quality N-channel FET manufactured by Rohm Semiconductor.

  • Feature: logic level gate and a low on-resistance
  • Supply and Demand Status: balanced
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 20V
  • Applications: power supplies, voltage regulators, and signal processing circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1595 $50.2425
765+ $0.1308 $100.0620
1,185+ $0.1268 $150.2580
1,630+ $0.1227 $200.0010
2,110+ $0.1186 $250.2460
2,825+ $0.1063 $300.2975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,000 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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