The K4A4G085WE-BCTD is a 4Gb (512M x 8) DDR4 SDRAM component manufactured by Samsung. It's designed for high-performance memory applications, offering increased bandwidth and reduced power consumption compared to previous generations of DDR memory.

Applications

• Desktop PCs
• Laptops
• Servers
• Workstations
• Networking equipment

Features

• 4Gb (512M x 8) Density
• DDR4 Interface
• Operating Voltage: 1.2V
• Data Transfer Rate: Up to 2666 Mbps (depending on configuration)
• Lead-Free (RoHS Compliant)

Benefits

• High Bandwidth: DDR4 technology provides significantly higher bandwidth compared to DDR3, improving overall system performance.
• Low Power Consumption: Operates at 1.2V, reducing power consumption and heat generation.
• Increased Memory Capacity: The 4Gb density allows for larger memory configurations in systems.
• Improved System Responsiveness: Faster data transfer rates result in quicker application loading and improved system responsiveness.
• Reliable Performance: Samsung's high-quality manufacturing ensures reliable and stable operation.

Technical Specifications

The K4A4G085WE-BCTD operates at a voltage of 1.2V and supports data transfer rates up to 2666 Mbps, although the specific achievable rate depends on the system configuration and motherboard support. It is a lead-free and RoHS compliant component. Detailed timing parameters and other specifications can be found in the official Samsung datasheet.

This DDR4 SDRAM chip is a key component in modern computing systems, providing the high-speed memory needed for demanding applications.