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K4B2G1646C-HCF8

Part No K4B2G1646C-HCF8
Manufacturer Samsung
Catalog Hard To Find
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1012+
Reference case BGA
Manufacturer Samsung
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Win Source Part Number 714659-K4B2G1646C-HCF8
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K4B2G1646C-HCF8 CAD Model

Description

The K4B2G1646C-HCF8 is a 2Gb DDR3 SDRAM from Samsung. This high-speed memory component is designed for use in a wide range of applications, providing fast data access and high bandwidth for demanding tasks. It is commonly found in computers, servers, and other devices requiring substantial memory capacity and performance.

Applications:

  • Desktop and Laptop Computers: Main system memory for running applications and operating systems.
  • Servers: High-capacity memory for handling large workloads and data processing.
  • Gaming Consoles: Graphics memory for rendering complex game environments.
  • Networking Equipment: Packet buffering and data storage in routers and switches.

Features:

  • 2Gb Capacity: Provides ample memory space for demanding applications.
  • DDR3 Technology: High-speed data transfer rates.
  • 16-bit Data Bus: Enables wide data access.
  • Low Power Consumption: Designed for energy-efficient operation.
  • RoHS Compliant: Environmentally friendly construction.

Benefits:

  • Increased System Performance: High-speed data access improves overall system performance.
  • Enhanced Multitasking: Large memory capacity allows for smooth multitasking and running multiple applications simultaneously.
  • Improved Graphics Performance: Fast graphics memory enables smooth rendering of complex game environments.
  • Energy Efficiency: Low power consumption extends battery life in portable devices and reduces energy costs in servers.
  • Reliable Operation: Robust design ensures reliable operation in demanding applications.

Additional Details:

The K4B2G1646C-HCF8 DDR3 SDRAM typically operates at a clock frequency of 800 MHz (resulting in a data transfer rate of 1600 Mbps). It requires a supply voltage of 1.5V. The device is organized as 128M x 16, meaning it has 128 million memory locations, each capable of storing 16 bits of data. It supports various DDR3 features, such as on-die termination (ODT) and dynamic on-die termination (DODT). The device is available in a FBGA (Fine-Pitch Ball Grid Array) package.

This DDR3 SDRAM is well-suited for applications requiring high-speed data access and large memory capacity. Its performance and features make it a suitable choice for various computing and embedded systems.

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