The Samsung K4H560438E-UCB3 is a 512Mbit DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory). It's designed for applications needing high-speed data access, such as computer systems, graphic cards, and embedded devices. It offers a balance between performance, power consumption, and cost.

Applications

• Desktop and laptop computers
• Graphics cards
• Gaming consoles
• Networking devices
• Embedded systems

Features

• 512Mbit (16M x 4 x 8 banks) memory organization
• Double Data Rate architecture (two data transfers per clock cycle)
• Data rate up to DDR333 (166MHz clock frequency)
• Differential clock inputs (CK and /CK)
• 8 internal banks
• Burst Length: 2, 4, 8
• CAS Latency (CL): 2, 2.5, 3
• Auto Precharge and Auto Refresh
• Partial Array Self Refresh (PASR)
• Power-Down Mode
• Operating Voltage: 2.5V
• Lead-Free Package

Benefits

• Fast data access speeds
• Improved system performance
• Reduced power consumption compared to older memory technologies
• Increased memory density in a smaller footprint
• Enhanced data integrity through built-in features

Additional Details

The K4H560438E-UCB3 is packaged in a 66-pin TSOP II (Thin Small Outline Package). Its DDR architecture allows it to transfer data twice as fast as standard SDR SDRAM. The 'UCB3' indicates the speed grade and specific timings supported. It is compliant with JEDEC standards for DDR SDRAM ensuring compatibility with a wide range of systems and memory controllers. Its auto precharge functionality and power-down modes help to simplify memory controller design and improve system power efficiency. The partial array self-refresh (PASR) feature allows the device to refresh only a portion of the memory array, further reducing power consumption. This memory component is designed for applications where high speed and efficient memory access is essential for optimal system performance.