The K4T51163QI-HCE is a 256Mb DDR2 SDRAM (Double Data Rate Two Synchronous Dynamic Random-Access Memory) component manufactured by Samsung. It's designed for applications that need moderate memory capacity and relatively high-speed data transfer.

Applications

• Graphics cards (lower-end models)
• Networking devices
• Set-top boxes
• Embedded systems
• Industrial control systems

Features

• Double Data Rate 2 (DDR2): Transfers data twice per clock cycle.
• 256Mb Capacity: Provides a moderate amount of memory storage.
• 16-bit Data Bus: Transfers data 16 bits at a time.
• Low Power Consumption: Operates at a relatively low voltage for energy efficiency.
• JEDEC Standard: Adheres to JEDEC standards for DDR2 compatibility.

Benefits

• Increased Bandwidth: DDR2 technology offers higher bandwidth compared to DDR SDRAM.
• Improved Performance: Increases system responsiveness and data throughput.
• Reduced Power Consumption: Helps extend battery life in portable devices.
• Cost-Effective: Provides a balance of performance and cost for various applications.

Additional Details

The K4T51163QI-HCE meets JEDEC standards for DDR2 SDRAM, ensuring compatibility with a wide range of systems. The 'HCE' typically designates a specific speed grade or temperature range. Key specifications include operating frequency, voltage levels, timings, and power consumption. Refer to the Samsung datasheet for the most accurate and comprehensive information. This DDR2 SDRAM part provides a cost-effective and reliable solution for applications needing efficient memory usage. Consider proper thermal management techniques to ensure reliable operation over its specified temperature range. Always consult the official datasheet before integrating this part into any design.