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Same model may have multiple batches, images only for reference.
K4T51163QJBCF7000
Same model may have multiple batches, images only for reference.

K4T51163QJBCF7000

Part No K4T51163QJBCF7000
Manufacturer Samsung
Catalog RAM
Description DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Access Time 400 ps
Address Bus Width 15 b
Mounting SMD (SMT)
Case / Package FBGA
Data Bus Width 16 b
Density 512 Mb
Max Frequency 800 MHz
Maximum Operating Temperature 95 °C
Max Supply Voltage 1.9 V
Min Operating Temperature 0 °C
Min Supply Voltage 1.7 V
Mount Surface Mount
Nominal Supply Current 130 mA
Number of Pins 84
Operating Supply Voltage 1.8 V
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1026262-K4T51163QJBCF7000
Categories RAM
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian K4T51163QJBCF7000 CAD Model

Description

The Samsung 512 Mb RAM is a high-performance memory module with a density of 512 Mb and an operating supply voltage of 1.8 V.

  • Maximum Frequency: 800 MHz
  • Access Time: 400 ps
  • Mounting: Surface-mounted
  • Pins: 84
  • Data Bus Width: 16 b
  • Address Bus Width: 15 b
  • Case/Package: FBGA
  • RoHS: Compliant
  • Maximum Operating Temperature: 95 °C
  • Nominal Supply Current: 130 mA
  • Minimum Supply Voltage: 1.7 V
  • Maximum Supply Voltage: 1.9 V

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