The K9F5608UOB-PIBO is a 256M x 8 bit NAND Flash memory produced by Samsung. It is designed for applications requiring non-volatile storage with high density and performance, commonly used in consumer electronics and embedded systems.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards
• Embedded Systems
• MP3 Players
• Mobile Phones

Features:

• Capacity: 256M x 8 bit (2Gbit)
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (512 + 16) Bytes
• Block Size: (16K + 512) Bytes
• Data Retention: 10 years
• Endurance: 100,000 Program/Erase Cycles
• Operating Temperature: -25°C to +85°C
• RoHS Compliant

Benefits:

• High density non-volatile storage
• Fast read/write performance
• Low power consumption
• Excellent data retention
• High endurance for program/erase cycles
• Compact form factor

Technical Specifications:

The K9F5608UOB-PIBO NAND Flash memory features a page size of 528 bytes (512 + 16) and a block size of 16896 bytes (16K + 512). It operates within a voltage range of 2.7V to 3.6V. It offers a data retention of 10 years and is designed to endure 100,000 program/erase cycles. The operating temperature range is from -25°C to +85°C. It is commonly used in removable storage devices and embedded applications where reliable and efficient non-volatile memory is required.

This NAND Flash memory chip provides a reliable and efficient storage solution for a wide range of applications, thanks to its high density, fast performance, and low power consumption.