The K9WAG08U1E-SIB0 is a 16Gbit (2Gx8) NAND Flash memory device from Samsung. It is designed for high-density storage applications and is commonly used in various consumer electronics and embedded systems.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Mobile Phones and Tablets
• Digital Cameras

Features:

• Capacity: 16Gbit (2G x 8 bit)
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (4K + 218) Bytes
• Block Size: (2M + 112K) Bytes
• Data Retention: 10 years
• Endurance: 50,000 Program/Erase Cycles
• Operating Temperature: -25°C to +85°C
• RoHS Compliant

Benefits:

• High storage capacity for data-intensive applications
• Fast data access and transfer rates
• Low power consumption, ideal for portable devices
• High reliability and endurance
• Cost-effective solution for large-capacity storage

Technical Specifications:

The K9WAG08U1E-SIB0 NAND Flash memory chip features a page size of 4314 bytes (4K + 218) and a block size of 2252800 bytes (2M + 112K). It operates within a voltage range of 2.7V to 3.6V and guarantees data retention for 10 years. It is designed to endure 50,000 program/erase cycles. The operating temperature range is between -25°C to +85°C.

The K9WAG08U1E-SIB0 is a reliable and efficient storage solution for a wide range of applications, thanks to its high density, fast performance, and low power consumption.