The Samsung KM41C464Z-10 is a 262,144-bit Dynamic RAM (DRAM) organized as 65,536 words by 4 bits. This DRAM provides a balance between memory capacity and data width, making it suitable for various applications.

Applications:

• Embedded systems
• Printers and peripherals
• Microcontroller applications
• Industrial control systems
• Small memory modules

Features:

• Capacity: 262,144 bits (256Kbit)
• Organization: 65,536 x 4 bits
• Access time: 100ns (inferred from part number suffix -10)
• Single 5V power supply
• TTL compatible inputs and outputs
• Refresh: 256 cycle/4ms
• Package: DIP (Dual In-line Package) or equivalent

Benefits:

• Provides a 4-bit wide data path for efficient data transfer
• Cost-effective for smaller memory applications
• Easy to interface with microcontrollers and other digital systems
• Standard packaging ensures wide availability and compatibility
• Suitable for space-constrained applications

Additional Details:

The KM41C464Z-10 relies on dynamic storage cells and needs periodic refresh cycles to maintain data integrity. External memory controllers or dedicated refresh circuits typically handle the refresh process. The device operates on a single 5V power supply and features TTL-compatible inputs and outputs for easy interfacing with other digital logic. Its access time is 100ns. The 256 cycle/4ms refresh rate ensures data retention. The packaging is most likely a standard DIP or compatible package.