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Same model may have multiple batches, images only for reference.
EKI04047 Sanken
Same model may have multiple batches, images only for reference.

EKI04047

Part No EKI04047
Manufacturer Sanken
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO-220
Datasheet
EKI04047 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Sanken
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 650μA
Max Gate Charge 35.3nC @ 10V
Max Input Capacitance 2410pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 42.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1035978-EKI04047
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian EKI04047 CAD Model

Description

The Sanken MOSFET is a high-performance N-channel device with a maximum power dissipation of 90W (Tc) and a drain-source breakdown voltage of 40V.

  • Maximum Power Dissipation: 90W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Maximum Rds on at Id, Vgs: 5.2 mOhm @ 42.8A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 650μA
  • Maximum Gate Charge: 35.3nC @ 10V
  • Maximum Input Capacitance: 2410pF @ 25V
  • Package: TO-220-3
  • Mounting Type: Through Hole

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