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2SC4474D

Part No 2SC4474D
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Custom Parts (0 - A)
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Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1122613-2SC4474D
Categories Custom Parts
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC4474D CAD Model

Description

The 2SC4474D is an NPN silicon epitaxial transistor manufactured by SANYO Semiconductor (U.S.A) Corporation. It is designed for high-frequency amplification and switching applications.

Applications

  • High-frequency amplifiers: Used in RF and IF amplifier stages in communication equipment.
  • Oscillators: Employed in oscillator circuits for generating high-frequency signals.
  • Mixers: Utilized in mixer circuits for frequency conversion.
  • Switching circuits: Used as a switch in high-speed switching applications.
  • Driver stages: Used as a driver for power amplifiers.

Features

  • NPN silicon epitaxial transistor: Provides good high-frequency performance.
  • High transition frequency (fT): Enables high-speed operation.
  • Low noise figure: Ensures low noise amplification.
  • High power gain: Provides significant signal amplification.
  • Small signal amplifier: Designed for amplifying small signals.

Benefits

  • High-frequency performance: Suitable for high-frequency applications.
  • Low noise: Minimizes noise in amplifier circuits.
  • Stable operation: Provides stable and reliable performance.
  • Easy to use: Simple to implement in various circuits.

Additional Details

The 2SC4474D transistor is typically packaged in a small outline transistor (SOT) package. The collector-emitter voltage (VCEO) is a crucial parameter to consider for proper operation. The specific values for current gain (hFE) and other parameters can be found in the datasheet. This transistor is commonly used in communication devices, such as radios and wireless systems. Proper biasing is necessary to achieve optimal performance and prevent damage to the transistor. The operating temperature range is typically specified in the datasheet. The datasheets should always be reviewed before use to ensure that the device meets design requirements.

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