The 2SK1645 is an N-channel silicon junction field-effect transistor (JFET) designed for high-frequency applications, particularly in RF amplifiers and mixers. Manufactured by SANYO Semiconductor, this transistor features low noise and high gain, making it suitable for sensitive receiver front-ends and other high-performance RF circuits.

Applications

• RF Amplifiers
• RF Mixers
• Oscillators
• High-Impedance Buffer Amplifiers
• Audio Amplifiers

Features

• N-Channel JFET
• Low Noise Figure
• High Gain
• High Input Impedance
• Excellent Linearity

Benefits

• Improved signal-to-noise ratio in RF receivers.
• Increased signal amplification in RF and audio circuits.
• Minimal loading of signal sources.
• Reduced distortion in amplifier circuits.
• Stable and reliable performance.

Technical Specifications

The 2SK1645 JFET has the following key specifications:

• Drain-Source Voltage (VDS): 25 V
• Gate-Source Voltage (VGS): -25 V
• Drain Current (ID): 10 mA
• Gate-Source Cutoff Voltage (VGSOFF): -0.5 to -5 V
• Forward Transfer Admittance (Yfs): 3.5 mS (typical)
• Input Capacitance (Ciss): 5 pF (typical)
• Noise Figure (NF): 1.5 dB (typical) at 100 MHz

The 2SK1645's low noise figure makes it ideal for use in sensitive receiver front-ends, while its high gain allows for efficient signal amplification. The high input impedance minimizes loading effects on the signal source, ensuring accurate signal processing. Its excellent linearity reduces distortion in amplifier circuits, providing clean and accurate signal reproduction.