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SMG2310B

Part No SMG2310B
Manufacturer SECOS
Description N-Channel Enhancement Mode MOSFET
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ECAD Module
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Manufacturer SECOS
Win Source Part Number 1251857-SMG2310B
Manufacturer Homepage www.secosgmbh.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SMG2310B CAD Model

Description

The SMG2310B is a P-Channel enhancement mode MOSFET manufactured by SECOS. It is designed for a variety of applications, offering efficient power management and load switching capabilities. Its low on-resistance and fast switching speed make it suitable for both high-frequency and general-purpose switching applications.

Applications

  • Power Management Circuits: Used in DC-DC converters and voltage regulators.
  • Load Switching: Employed for switching various loads in electronic systems.
  • Battery Management Systems: Found in battery charging and discharging circuits.
  • Portable Devices: Used in smartphones, tablets, and laptops for power control.
  • Motor Control: Suitable for low-power motor control applications.

Features

  • P-Channel Enhancement Mode: Easy to control with a gate voltage.
  • Low On-Resistance (RDS(on)): Minimizes power loss and enhances efficiency.
  • Fast Switching Speed: Enables quick response times in switching circuits.
  • Low Threshold Voltage: Simplifies driving the MOSFET with logic-level signals.
  • High Input Impedance: Reduces the load on the driving circuit.

Benefits

  • Improved Efficiency: Low on-resistance minimizes power dissipation, leading to energy savings.
  • Simplified Circuit Design: P-Channel configuration streamlines drive circuitry.
  • Enhanced System Performance: Fast switching speeds allow for quick response times.
  • Extended Battery Life: Efficient power management extends battery life in portable devices.
  • Reliable Operation: Robust design ensures stable and reliable performance.

Additional Details

The SMG2310B typically comes in a surface-mount package, such as SOT-23. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and total power dissipation. The specific RDS(on) value varies based on the applied VGS voltage. Understanding the thermal resistance is crucial for effective heat management in high-power applications. Always consult the datasheet for precise electrical characteristics and recommended operating conditions to ensure optimal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,265 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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