2N5551HR High-Reliability NPN Transistor by STMicroelectronics

The 2N5551HR from STMicroelectronics is a high-reliability NPN bipolar junction transistor (BJT) designed for aerospace and defense applications. This device is a part of ST's high-reliability product line, offering enhanced performance and reliability for systems that require long-term operation under harsh conditions.

Key Features

• Voltage and Current Ratings: The 2N5551HR is characterized by a collector-emitter voltage (V<sub>CEO) of 160V, collector-base voltage (V<sub>CBO) of 180V, and a collector current (I<sub>C) of up to 600mA, making it suitable for high-voltage applications.
• High Gain Bandwidth Product: With a transition frequency (f<sub>T) of 100MHz, this transistor is capable of amplifying signals with high efficiency, making it ideal for fast-switching applications.
• High Reliability: The 2N5551HR is built to meet stringent reliability standards, ensuring stable performance over its lifespan, which is crucial for mission-critical applications.
• Hermetic Packaging: The device comes in a hermetically sealed package, providing excellent protection against environmental factors such as moisture and dust.
• Extended Temperature Range: It operates over a wide temperature range, typically from -55°C to +150°C, which is essential for systems exposed to extreme thermal variations.

Applications

The 2N5551HR is designed for a variety of high-reliability applications, including:

• Space and satellite systems
• Avionics and aeronautics equipment
• Military communication devices
• High-reliability industrial applications
• Medical electronics where reliability is paramount

Quality and Standards

STMicroelectronics is committed to the highest quality standards, and the 2N5551HR meets or exceeds the requirements of international standards for high-reliability electronic components. The production process is closely monitored, and each unit undergoes rigorous testing to ensure it meets the exacting specifications required for critical applications.

For engineers and designers seeking a reliable NPN transistor capable of withstanding the rigors of high-stress environments, the 2N5551HR offers a robust solution that combines performance with unwavering reliability.