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2SD882

Part No 2SD882
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 3A SOT32
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 1.1V @ 150mA, 3A
Collector Cut-off Current(Max) 100μA
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 12.5W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package SOT-32-3
Win Source Part Number 038688-2SD882
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD882 CAD Model

Description

The 2SD882 is a versatile NPN bipolar junction transistor (BJT) designed and manufactured by STMicroelectronics, a global semiconductor leader. This medium power transistor is crafted to deliver exceptional performance in a wide range of electronic applications. Its robust design allows it to handle moderate power amplification and switching operations with ease.

The 2SD882 is well-suited for various applications including linear and switching industrial equipment. It is commonly used in power management tasks such as DC-DC converters, power supplies, motor drivers, and other circuits where a reliable switching or amplification component is essential.

Key Features:

  • High Current Capability: The 2SD882 can handle collector currents up to 3A, making it suitable for driving larger loads.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which ensures efficient operation and helps in reducing power losses.
  • High Power Dissipation: With a power dissipation of 10W, this device can sustain higher energy levels, which is beneficial for robust applications.
  • Complementary PNP Type Available: The 2SD882 can be paired with its complementary PNP type, providing flexibility in designing push-pull amplifiers and other complementary circuits.

Specifications:

Parameter Value Collector-Base Voltage (VCBO) 100V Collector-Emitter Voltage (VCEO) 40V Emitter-Base Voltage (VEBO) 5V Collector Current (IC) 3A Collector Power Dissipation (PC) 10W DC Current Gain (hFE) 40 to 320 Operating and Storage Junction Temperature Range -55°C to +150°C

The 2SD882 transistor is housed in a TO-126 package, which is designed for through-hole mounting, making it easy to integrate into existing designs. Its performance and reliability are backed by STMicroelectronics' commitment to quality, making it a trusted choice for engineers and designers looking for a robust medium power transistor.

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