The 2SD882 is a versatile NPN bipolar junction transistor (BJT) designed and manufactured by STMicroelectronics, a global semiconductor leader. This medium power transistor is crafted to deliver exceptional performance in a wide range of electronic applications. Its robust design allows it to handle moderate power amplification and switching operations with ease.
The 2SD882 is well-suited for various applications including linear and switching industrial equipment. It is commonly used in power management tasks such as DC-DC converters, power supplies, motor drivers, and other circuits where a reliable switching or amplification component is essential.
Key Features:
- High Current Capability: The 2SD882 can handle collector currents up to 3A, making it suitable for driving larger loads.
- Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which ensures efficient operation and helps in reducing power losses.
- High Power Dissipation: With a power dissipation of 10W, this device can sustain higher energy levels, which is beneficial for robust applications.
- Complementary PNP Type Available: The 2SD882 can be paired with its complementary PNP type, providing flexibility in designing push-pull amplifiers and other complementary circuits.
Specifications:
Parameter
Value
Collector-Base Voltage (VCBO)
100V
Collector-Emitter Voltage (VCEO)
40V
Emitter-Base Voltage (VEBO)
5V
Collector Current (IC)
3A
Collector Power Dissipation (PC)
10W
DC Current Gain (hFE)
40 to 320
Operating and Storage Junction Temperature Range
-55°C to +150°C
The 2SD882 transistor is housed in a TO-126 package, which is designed for through-hole mounting, making it easy to integrate into existing designs. Its performance and reliability are backed by STMicroelectronics' commitment to quality, making it a trusted choice for engineers and designers looking for a robust medium power transistor.