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BUT70W

Part No BUT70W
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description TRANS NPN 125V 32A TO247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 32 A
Voltage - Collector Emitter Breakdown (Max) 125 V
Vce Saturation (Max) @ Ib, Ic 900mV @ 7A, 70A
Power - Max 200 W
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number BUT70
Standard Package 600 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573669-BUT70W
Ultra Librarian 3D Model Ultra Librarian BUT70W CAD Model

Description

The BUT70W is a high voltage NPN power transistor manufactured by STMicroelectronics, designed for use in a wide range of electronic applications. This device is particularly well-suited for high-speed switching applications due to its outstanding electrical characteristics.

Key Features

  • High Voltage Capability: The BUT70W can handle high voltage operations, making it ideal for circuits that require a high breakdown voltage.
  • Fast Switching Speed: This component is optimized for rapid switching, ensuring efficient performance in applications where switching speed is critical.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage, which helps to reduce power loss and improve efficiency.
  • High Current Rating: With the ability to manage significant current levels, the BUT70W is suitable for high-power applications.
  • Rugged Construction: The device is built to withstand tough conditions, ensuring reliability and longevity in demanding environments.

Applications

The versatility of the BUT70W allows it to be used in a variety of electronic circuits and systems, including:

  • Switching regulators
  • Motor controls
  • Inverters
  • Power amplifiers
  • High-frequency power supplies

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 450 V Collector Current (I<sub>C) 10 A Power Dissipation (P<sub>D) 125 W Configuration Single

The BUT70W transistor is encapsulated in a TO-247 package, which is known for its excellent thermal performance. This package allows the device to dissipate heat effectively, further enhancing its performance and reliability.

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The BUT70W is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. Customers can trust in the durability and performance of this high voltage NPN transistor for their critical applications.

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