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P55NF06FP

Part No P55NF06FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 037324-P55NF06FP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P55NF06FP CAD Model

Description

STMicroelectronics P55NF06FP - N-Channel MOSFET

The P55NF06FP is a robust and high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of the STP series and is well-suited for a wide range of applications, including switch-mode power supplies, motor control, and general-purpose switching.

With its advanced technology, the P55NF06FP provides improved on-state resistance and faster switching speeds, making it an efficient choice for power management tasks. The device is characterized by a drain-source voltage (V<sub>DS) of 60V, which allows it to handle moderate voltage levels while maintaining robust performance. The continuous drain current (I<sub>D) is rated at 50A, ensuring that the MOSFET can support high current applications without overheating or failing.

The P55NF06FP features a low threshold voltage (V<sub>GS(th)), which means it can be driven at lower gate voltages, reducing power consumption and making it compatible with logic-level devices. Additionally, the device boasts a low gate charge (Q<sub>g), which contributes to its fast switching capabilities and reduced switching losses, further enhancing the efficiency of the systems in which it is used.

Designed for through-hole mounting, the P55NF06FP comes in a TO-220FP package, which provides excellent thermal performance and is easy to install in a variety of circuit boards. The package is also well-known for its durability and mechanical robustness, ensuring a reliable connection and a long operational lifespan.

For protection and reliability, the P55NF06FP incorporates an avalanche ruggedness feature, allowing it to withstand high-energy pulses in the avalanche and commutation modes. This makes the MOSFET an ideal choice for tough industrial environments where electrical stress can be a concern.

In summary, the P55NF06FP from STMicroelectronics is a versatile and efficient N-Channel MOSFET that offers a balance of high performance, reliability, and energy efficiency. Its advanced features make it suitable for a broad range of power applications, where it can help to reduce power losses and improve overall system performance.

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