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P6NB90

Part No P6NB90
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5.8A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 135W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 061041-P6NB90
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian P6NB90 CAD Model

Description

The P6NB90 from STMicroelectronics is a robust Power MOSFET designed to deliver high performance in a wide range of applications. This component is part of the company's extensive MOSFET portfolio and is engineered to address the demanding requirements of modern electronic circuits.

Key Features

  • High Voltage Capability: The P6NB90 is capable of handling high voltages, making it suitable for applications requiring efficient power management and distribution.
  • Low On-Resistance: With its low on-resistance, this MOSFET ensures minimal power loss during operation, which enhances the overall efficiency of the device it is used in.
  • Fast Switching Speed: The device is designed for fast switching, which is crucial for reducing switching losses and improving performance in power conversion applications.
  • Improved Gate Charge: The P6NB90 features an optimized gate charge, which allows for better control of the gate voltage, thus improving the responsiveness of the MOSFET.
  • Enhanced Durability: Built to withstand tough conditions, the P6NB90 is characterized by its ruggedness and reliability over time, even in high-stress environments.

Applications

The P6NB90 is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC-DC Converters
  • Motor Control Systems
  • Inverters and Welding Equipment
  • Automotive Applications
  • Power Management Solutions

Technical Specifications

The P6NB90 boasts impressive technical specifications that ensure it meets the needs of sophisticated electronic systems:

  • Drain-source Voltage (V<sub>DS): 900V
  • Continuous Drain Current (I<sub>D): 6A
  • Power Dissipation (P<sub>D): 125W
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-220

In conclusion, the P6NB90 Power MOSFET from STMicroelectronics is a high-quality component that offers efficiency, durability, and versatility for a range of high-voltage applications. Its advanced features and technical specifications make it an ideal choice for designers seeking to improve the performance and reliability of their power management systems.

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