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P7NB60

Part No P7NB60
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.2A TO-220
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1625pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 343253-P7NB60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P7NB60 CAD Model

Description

The P7NB60 from STMicroelectronics is a robust and reliable Power MOSFET designed for high-performance switching applications. This component is widely recognized for its efficiency and durability, making it an excellent choice for a variety of power management tasks in both commercial and industrial settings.

Key Features:

  • High Current Capability: The P7NB60 is capable of handling significant current, making it suitable for high-power circuits and applications.
  • Low On-Resistance: With a low RDS(on), this MOSFET ensures minimal power loss during operation, contributing to overall system efficiency.
  • Fast Switching Speed: The device's quick switching response helps in reducing switching losses and is ideal for high-frequency applications.
  • High Voltage Threshold: Designed to withstand high voltages, the P7NB60 can be used in circuits with higher voltage requirements.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under stress conditions.

Applications:

The versatility of the P7NB60 allows it to be used in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Automotive and transportation power management
  • Renewable energy systems, such as solar inverters and wind turbines

Technical Specifications:

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 7A Power Dissipation (P<sub>D) 125W Operating Temperature Range -55°C to +150°C

In summary, the P7NB60 Power MOSFET from STMicroelectronics is a high-quality electronic component that offers a blend of power, efficiency, and reliability for engineers and designers looking to optimize their power management systems.

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