The STB17N80K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed with the innovative MDmesh™ K5 technology. This technology is renowned for its excellent RDS(on) area ratio and reduced on-resistance, making the STB17N80K5 an ideal choice for a wide range of high-efficiency applications.

With a drain-source voltage (V<sub>DS) of 800 V, this MOSFET is well-suited for high voltage applications that require a robust and reliable component. The device boasts a continuous drain current (I<sub>D) of 17 A, allowing it to handle significant power without compromise. Furthermore, the typical on-resistance of just 0.16 Ohm ensures minimal power loss and improved overall efficiency.

The STB17N80K5 comes in a rugged and compact D2PAK package, which is not only space-efficient but also offers excellent thermal performance. This packaging, combined with the MOSFET's high junction temperature capability, ensures reliable operation even in demanding thermal environments.

Key features of the STB17N80K5 include:

• 800 V drain-source voltage (V<sub>DS)
• 17 A continuous drain current (I<sub>D)
• 0.16 Ohm typical on-resistance (RDS(on))
• 100% avalanche tested
• Zener-protected
• Low gate charge and input capacitance

These features make the STB17N80K5 highly efficient and reliable, suitable for a variety of power applications, including switch mode power supplies (SMPS), LED lighting, high-efficiency converters, and power management solutions.

STMicroelectronics provides comprehensive technical support and documentation for the STB17N80K5, including datasheets, application notes, and simulation models, ensuring engineers can integrate this component into their designs with confidence and ease.