The STB23NM60ND is a highly efficient, robust N-channel power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of the MDmesh™ II Plus low Qg series, which is renowned for its outstanding on-resistance and switching performance.

Key Features

• Voltage Rating: The STB23NM60ND has a drain-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
• Current Capacity: It can handle a continuous drain current (I<sub>D) of 17A, ensuring reliable performance in demanding situations.
• Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 0.165Ω, this MOSFET offers minimal conduction losses and improved efficiency.
• Fast Switching: The low gate charge (Qg) enhances the switching speed, which is crucial for high-frequency power conversion applications.
• 100% Avalanche Tested: Each unit is rigorously tested to ensure reliability under extreme conditions.
• Zener-Protected: The gate-source is protected with a built-in Zener diode, safeguarding the MOSFET from electrostatic discharges and voltage spikes.

Applications

The STB23NM60ND is designed for a wide range of applications including:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC/DC Converters
• LED Lighting
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Solar Inverters and other renewable energy systems

Quality and Environmental Compliance

STMicroelectronics is committed to providing environmentally friendly products. The STB23NM60ND is compliant with the RoHS directive and is free from lead and other hazardous substances, making it a safe choice for electronic equipment.

Package and Availability

The STB23NM60ND is available in a D2PAK package, which is optimized for efficient heat dissipation and space-saving on the PCB. For detailed information on pricing, availability, and ordering, interested customers should contact STMicroelectronics or an authorized distributor.