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STB3NK60ZT4

Part No STB3NK60ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.4A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 11.8nC @ 10V
Max Input Capacitance 311pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 066282-STB3NK60ZT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB3NK60ZT4 CAD Model

Description

STB3NK60ZT4 - N-Channel MOSFET by STMicroelectronics

The STB3NK60ZT4 is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This power MOSFET is designed to deliver high performance in a wide range of applications, including switch-mode power supplies, motor control, and power conversion systems.

With a drain-source voltage (V<sub>DS) of 600V and a continuous drain current (I<sub>D) of 3A, the STB3NK60ZT4 is capable of handling high voltage and current levels, making it an excellent choice for high-efficiency power management tasks. The device comes in a D2PAK package, which is known for its robustness and excellent thermal performance, ensuring reliable operation even under challenging conditions.

The STB3NK60ZT4 features a low threshold voltage (V<sub>GS(th)) which facilitates easy drive and enhances the overall efficiency of the system it is integrated into. It also boasts a low gate charge (Q<sub>g), which reduces switching losses and improves the switching speed of the MOSFET, contributing to the efficiency of the circuit.

One of the key advantages of the STB3NK60ZT4 is its Zener-protected gate, which provides enhanced protection against overvoltage, ensuring the longevity and reliability of the device. This feature is particularly important in applications where voltage spikes can occur, potentially damaging unprotected components.

The MOSFET's high dv/dt capability allows it to perform well in fast-switching applications, while its 100% avalanche tested design guarantees robustness and long-term reliability. Additionally, the device is compliant with the RoHS directive, which means it is manufactured without the use of hazardous substances, making it an environmentally friendly choice for electronic designs.

In conclusion, the STB3NK60ZT4 from STMicroelectronics is a versatile and robust N-Channel MOSFET that offers a combination of high voltage and current handling capabilities, thermal efficiency, and protection features, making it an ideal choice for designers looking to create efficient and reliable power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5953 $59.5300
240+ $0.4885 $117.2400
370+ $0.4732 $175.0840
505+ $0.4580 $231.2900
655+ $0.4428 $290.0340
875+ $0.3969 $347.2875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,800 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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