STB24N60M2 - N-Channel 600 V, 0.165 ohm typ., 17 A MDmesh™ M2 Power MOSFET in D²PAK Package

The STB24N60M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed with the innovative MDmesh™ M2 technology. This device is tailored for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, DC-AC inverters for solar energy systems, and other energy-efficient solutions in industrial and consumer segments.

With a drain-source voltage (V<sub>DS) of 600 V, the STB24N60M2 is well-suited for high voltage operations. The low on-resistance (R<sub>DS(on)) of only 0.165 ohm typ. at 10 V ensures minimal conduction losses, enhancing the overall efficiency of the system in which it is deployed. The device can handle a continuous drain current (I<sub>D) of 17 A, providing robust performance for a wide range of power applications.

This Power MOSFET comes in a rugged D²PAK package, which is known for its high power density and ability to handle high thermal and electrical stresses. The STB24N60M2 also features Zener-protected gate, providing enhanced reliability under stressful conditions and making it a robust choice for demanding applications.

Key features of the STB24N60M2 include:

• 100% avalanche tested
• Very low intrinsic capacitances
• Very good manufacturing repeatability
• High dv/dt and avalanche capabilities
• Low gate charge

STMicroelectronics' commitment to environmental sustainability is reflected in the STB24N60M2's compliance with the European Union’s Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from environmentally harmful substances.

In summary, the STB24N60M2 from STMicroelectronics is a superior Power MOSFET that offers a perfect balance between high efficiency and robustness, making it an ideal choice for designers looking to optimize their power management solutions.