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STB25N80K5

Part No STB25N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 19.5A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1600pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 19.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102784-STB25N80K5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STB25N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STB25N80K5 CAD Model

Description

    

STB25N80K5 - N-channel 800 V, 0.135 Ω typ., 21 A MDmesh™ K5 Power MOSFET in D2PAK package by STMicroelectronics

    

        The STB25N80K5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is part of their innovative MDmesh™ K5 series. This device is designed to meet the stringent requirements of modern power supply applications, offering an optimal combination of low on-resistance, high blocking voltage, and superior switching performance.    

    

        With a drain-source voltage of 800 V, the STB25N80K5 ensures safe operation even under high voltage conditions, making it suitable for a variety of applications, including switch-mode power supplies (SMPS), LED lighting, solar inverters, and industrial applications such as welding, plasma cutting, and high-performance drives.    

    

        The MOSFET's low on-resistance of 0.135 Ω typ. contributes to its high efficiency, minimizing conduction losses and improving overall system performance. Additionally, with a continuous drain current of 21 A, this device can handle significant power and is capable of supporting high current applications.    

    

        The STB25N80K5 is housed in a robust D2PAK package, which provides excellent thermal performance and is suitable for compact designs. The package is designed to handle high thermal and electrical loads, ensuring reliability and longevity in demanding environments.    

    

        STMicroelectronics has incorporated their state-of-the-art MDmesh™ K5 technology into this MOSFET, which utilizes a proprietary vertical structure that optimizes the device's on-state resistance per area. This technology enables the STB25N80K5 to achieve outstanding efficiency and makes it a prime choice for applications that require high power density and energy savings.    

    

        Overall, the STB25N80K5 stands out for its high voltage capability, low on-resistance, and high current handling, all of which are essential for reducing power losses in high-performance power conversion systems. Its robust packaging and advanced technology make it a reliable and efficient solution for a wide range of power applications.    

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.9314 $54.6570
12+ $8.9694 $107.6328
18+ $8.6891 $156.4038
24+ $8.4088 $201.8112
31+ $8.1285 $251.9835
42+ $7.2876 $306.0792
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 970 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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