The STB27NM60ND is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the second generation of MDmesh™ technology. This device boasts state-of-the-art performance in power conversion applications, making it a perfect choice for high-efficiency solutions.

Key Features

• Low On-Resistance: With a typical on-resistance of just 0.190 Ω, the STB27NM60ND ensures minimal power loss and improved overall efficiency in electronic circuits.
• High Current Capability: This MOSFET can handle a continuous drain current of 21 A, enabling it to manage high power levels in various applications.
• High Voltage Rating: With a drain-source voltage of 600 V, the STB27NM60ND is suitable for high voltage power conversion systems.
• Low Gate Charge: The device features a low gate charge (Qg), which allows for faster switching and reduced switching losses.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
• Improved dv/dt Capability: The MOSFET is designed to withstand high voltage transients, making it more resilient in fast-switching applications.

Applications

The STB27NM60ND is well-suited for a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• High Efficiency DC-DC Converters
• Power Factor Correction (PFC) circuits
• LED Lighting Solutions
• Welding Equipment
• Uninterruptible Power Supplies (UPS)

Package and Quality

The STB27NM60ND is encapsulated in a D2PAK package, which is known for its compact size and ability to handle high thermal loads, making it ideal for space-constrained and high-performance applications. STMicroelectronics is committed to delivering high-quality products, and the STB27NM60ND is no exception, meeting stringent industry standards for performance and reliability.