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STB30N65DM6AG

Part No STB30N65DM6AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE-GRADE N-CHANNEL 650 V / N-Channel 650 V 28A (Tc) 223W (Tc) Surface Mount D²PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V
Power Dissipation (Max) 223W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339686-STB30N65DM6AG
Ultra Librarian 3D Model Ultra Librarian STB30N65DM6AG CAD Model

Description

The STB30N65DM6AG is a high-performance N-channel 650V MDmesh™ DM6 power MOSFET from STMicroelectronics, renowned for its exceptional efficiency and thermal performance. This advanced power transistor is designed to meet the rigorous demands of modern energy applications, including switch-mode power supplies, lighting, welding, solar inverters, and other high-efficiency converters.

Key Features

  • High Voltage Capability: With a breakdown voltage of 650V, the STB30N65DM6AG is able to handle high voltage applications with ease, ensuring reliability and robustness in harsh conditions.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency, making it ideal for high-performance power conversion systems.
  • Fast Switching Speed: The fast switching characteristics of this MOSFET reduce switching losses and improve the performance of power electronic circuits.
  • Reduced Gate Charge: The optimized gate charge (Qg) allows for efficient gate driving and further loss reduction, which is critical in high-frequency applications.
  • Enhanced Body Diode: The MOSFET features an improved intrinsic body diode with low reverse recovery charge (Qrr) and time (trr), which is beneficial for hard switching applications.

Applications

  • Switch-mode power supplies (SMPS)
  • LED lighting
  • Welding equipment
  • Solar inverters
  • High-efficiency DC-DC converters

Environmental and Quality Certifications

The STB30N65DM6AG adheres to stringent environmental standards, including RoHS and is compliant with STMicroelectronics' commitment to sustainability. The product is manufactured in state-of-the-art facilities that are certified for quality management systems, ensuring reliability and performance consistency.

Conclusion

With its combination of high voltage capability, low on-resistance, fast switching, and efficient gate charge management, the STB30N65DM6AG stands out as a superior solution for high-efficiency power applications. Its robust design and adherence to environmental standards make it a responsible choice for designers looking to create sustainable and reliable electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.9851 $55.8808
18+ $5.7314 $103.1652
28+ $5.5523 $155.4644
38+ $5.3732 $204.1816
49+ $5.1941 $254.5109
65+ $4.6568 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 410 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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