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STB33N60DM2

Part No STB33N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 24A D2PAK  /  N-Channel 600 V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 100 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB33
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16354-2,497-16354-1,497-16354-6
Standard Package 1,000
Win Source Part Number 1110578-STB33N60DM2
Ultra Librarian 3D Model Ultra Librarian STB33N60DM2 CAD Model

Description

STB33N60DM2 - N-channel 600 V, 0.093 ohm typ., 31 A MDmesh™ DM2 Power MOSFET in a D2PAK package

The STB33N60DM2 is a high-performance N-channel Power MOSFET from STMicroelectronics, a leader in semiconductor solutions. This advanced power MOSFET is part of the MDmesh™ DM2 series that combines state-of-the-art package technologies with the latest advancements in power electronics, providing high efficiency and reliability for a wide range of applications.

With a drain-source voltage (V<sub>DS) of 600 V, the STB33N60DM2 is designed to handle high voltage operations, making it suitable for applications such as switch-mode power supplies, lighting, welding, solar inverters, and other high-performance power conversion systems. The device's low on-resistance (R<sub>DS(on)) of only 0.093 ohm typ. ensures minimal power loss and improved overall efficiency, which is critical for energy-sensitive designs.

The STB33N60DM2 boasts a continuous drain current (I<sub>D) of 31 A at 25°C, providing robust current handling capability. Its high dv/dt and avalanche capabilities ensure safe and reliable operation even under harsh conditions. The device also features a fast recovery diode, which is essential for high-speed switching applications that require low recovery times.

This MOSFET is housed in a D2PAK package, which is known for its compact size and excellent thermal performance. The package is designed to handle high heat dissipation, ensuring the MOSFET operates at optimal temperatures, which is crucial for maintaining longevity and reliability.

STMicroelectronics has designed the STB33N60DM2 with an emphasis on environmental sustainability, as it is compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for manufacturers looking to create green products.

In summary, the STB33N60DM2 from STMicroelectronics is a powerful and efficient solution for engineers looking to improve the performance and efficiency of their high-voltage power conversion systems. Its robust design, low on-resistance, and high current handling capability, combined with the reliability of the MDmesh™ DM2 technology, make it a top choice for a wide array of industrial and consumer applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.5258 $51.1548
15+ $6.9955 $104.9325
23+ $6.7769 $155.8687
31+ $6.5583 $203.3073
40+ $6.3397 $253.5880
53+ $5.6839 $301.2467
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,245 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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