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STB50N65DM6

Part No STB50N65DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 33A D2PAK  /  N-Channel 650 V 33A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM6
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 91mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB50
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STB50N65DM6TR
Standard Package 1,000
Win Source Part Number 1158356-STB50N65DM6
Ultra Librarian 3D Model Ultra Librarian STB50N65DM6 CAD Model

Description

STB50N65DM6 - High Performance Power MOSFET by STMicroelectronics

The STB50N65DM6 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of STMicroelectronics' MDmesh™ DM6 series, which is renowned for its outstanding efficiency and performance in high-voltage applications. With a robust and durable design, the STB50N65DM6 is perfectly suited for a range of power conversion applications, including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and industrial applications.

Key Features

  • Voltage Rating: The STB50N65DM6 boasts a high breakdown voltage of 650V, making it ideal for systems that require reliable operation at high voltages.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.029 Ω, this MOSFET ensures minimal conduction losses, thereby increasing the efficiency of the entire system.
  • High Current Capability: This device can handle continuous drain currents up to 50A, allowing it to power high-demand applications with ease.
  • Fast Switching Speed: The fast-switching characteristics of the STB50N65DM6 reduce switching losses and improve overall performance in power conversion circuits.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) helps in achieving faster switching speeds and reduces power dissipation during the switching transient.
  • Enhanced Body Diode: The MOSFET features a rugged and fast recovery body diode, which is crucial for hard switching applications and ensures reliable operation under repetitive reverse recovery conditions.

Applications

The versatility of the STB50N65DM6 allows it to be used in a wide array of applications. It is particularly well-suited for:

  • High-efficiency switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • High-performance DC/AC inverters
  • Power factor correction circuits
  • LED lighting applications
  • Welding equipment
  • Solar power inverters
  • Electric vehicle charging stations

Conclusion

Overall, the STB50N65DM6 from STMicroelectronics represents a blend of the latest technology in power MOSFETs, offering designers a reliable and efficient component for their high-voltage, high-performance designs. Its robustness, coupled with high efficiency, ensures that it meets the demanding requirements of modern power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2176 $57.9168
44+ $2.6401 $116.1644
68+ $2.5576 $173.9168
94+ $2.4751 $232.6594
121+ $2.3926 $289.5046
162+ $2.1451 $347.5062
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,946 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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