The STB5NK50Z-1 is a high voltage N-channel Power MOSFET designed by STMicroelectronics, one of the leading names in semiconductor technology. This device is part of the SuperMESH™ family, which is known for its excellent RDS(on) area ratio and reduced gate charge. These features make the STB5NK50Z-1 an efficient and reliable choice for high-performance switching applications.

Key Features

• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitances
• Very good manufacturing repeatability

Applications

The STB5NK50Z-1 is suitable for a variety of applications, including:

• Switching applications
• High-efficiency converters
• Power management functions
• Motor control

Technical Specifications

With a drain-source voltage of 500V and a continuous drain current of 4.4A, the STB5NK50Z-1 is capable of handling significant power. The device also features a low threshold voltage and a low on-resistance of 1.15Ω, which enhances its overall efficiency.

Package and Quality

The STB5NK50Z-1 comes in a D2PAK package, which is known for its durability and thermal performance. The product is also RoHS compliant and conforms to STMicroelectronics' commitment to environmental sustainability.

Reliability and Performance

STMicroelectronics ensures that the STB5NK50Z-1 meets the highest standards of quality and reliability. Each unit undergoes rigorous testing to guarantee its performance even under extreme conditions. The device's robustness is further enhanced by its high avalanche ruggedness, making it a trustworthy component for demanding electronic circuits.

Whether you're designing power supplies, lighting systems, or any high-voltage application, the STB5NK50Z-1 offers the performance, efficiency, and reliability that modern electronics demand.