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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series STripFET II
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 66nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 2000pF @ 25V
Vgs (Maximum) ±15V
Power Dissipation (Maximum) 110W (Tc)
Rds On (Maximum) @ Id, Vgs 14 mOhm @ 30A, 10V
Operating Temperature Range -65°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260673-STB60NF06LT4
Manufacturer Homepage www.st.com
Family Name STB60NF06L
Introduction Date April 04, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB60NF06LT4 CAD Model

Description

The STB60NF06LT4 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to handle high current and voltage with efficiency, making it an ideal choice for a wide range of applications including switch-mode power supplies, motor control circuits, and automotive applications.

Key Features

  • Low threshold drive: The device can be driven at lower gate voltages, making it compatible with modern microcontrollers and reducing power dissipation.
  • High current capability: With a continuous drain current of 60A, the STB60NF06LT4 is capable of handling high current loads, which is essential for heavy-duty operations.
  • Low on-resistance: A low RDS(on) of just 0.0145Ω minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive applications.
  • 100% avalanche tested: Guarantees the device's reliability and robustness by ensuring it can withstand high-energy pulses.
  • Enhanced durability: The MOSFET is designed to endure harsh conditions, making it suitable for industrial and automotive environments.

Electrical Characteristics

  • Voltage: The breakdown voltage is 60V, providing a good safety margin for most low to medium voltage applications.
  • Speed: Fast switching characteristics due to its low gate charge and capacitance.

Applications

  • Power supply units
  • DC-DC converters
  • Motor drivers
  • Automotive applications
  • Power management solutions

The STB60NF06LT4 N-Channel MOSFET is a testament to STMicroelectronics' commitment to providing advanced power management solutions. It offers a balance between performance and reliability, which is essential for designers looking to create efficient and durable electronic systems. With its robust package and industry-leading features, the STB60NF06LT4 stands out as a superior choice for a multitude of power applications.

Note: Always consult the manufacturer's datasheet and application notes for comprehensive design guidelines and safety information.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3576 $54.3040
90+ $1.1139 $100.2510
140+ $1.0791 $151.0740
195+ $1.0443 $203.6385
250+ $1.0095 $252.3750
335+ $0.9051 $303.2085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 50,000 pieces
MOQ: 40 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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