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STB70N10F4

Part No STB70N10F4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 65A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102804-STB70N10F4
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STB70N10F4 CAD Model

Description

The STB70N10F4 from STMicroelectronics is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and conversion. This device is part of the MDmesh™ IV series, which is known for its excellent on-state resistance (R<sub>DS(on)) characteristics and fast switching performance, making it an ideal choice for a wide range of applications, including switched-mode power supplies (SMPS), lighting, DC-AC converters, and motor control systems.

Key Features

  • Low On-Resistance: The STB70N10F4 boasts an extremely low on-state resistance of just 0.033 ohms, contributing to its high efficiency and reduced heat generation.
  • High Current Capability: With a continuous drain current (I<sub>D) of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in applications where the MOSFET is exposed to high stress conditions.
  • Low Gate Charge (Q<sub>g): The optimized gate charge enables fast switching, which is critical for improving the performance in high-frequency power conversion systems.
  • Enhanced dv/dt Capability: The device's design allows for high dv/dt handling capability, providing stability and reliability under fast-switching conditions.

Applications

  • Switched Mode Power Supplies (SMPS)
  • High Efficiency DC-DC Converters
  • Motor Control Systems
  • LED Lighting
  • Inverters
  • Automotive Applications

The STB70N10F4 is encapsulated in a D2PAK package, which is suitable for compact designs while still offering excellent thermal performance. Its advanced technology enables energy savings and a reduced environmental impact, aligning with modern green energy requirements. Whether you are designing for industrial, consumer, or automotive applications, the STB70N10F4 MOSFET from STMicroelectronics provides a combination of efficiency, reliability, and performance that can help to optimize your electronic designs.

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