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STB80NF03L-04T4

Part No STB80NF03L-04T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 110nC @ 4.5V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 40A, 10V
Temperature Range - Operating -60°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031088-STB80NF03L-04T4
Family Name STB80NF03L-04
Introduction Date March 17, 2000
ECCN EAR99
Country of Origin China
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB80NF03L-04T4 CAD Model

Description

STB80NF03L-04T4 - N-Channel MOSFET by STMicroelectronics

The STB80NF03L-04T4 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including DC-DC converters, motor control, and general-purpose switching.

Key Features

  • Low On-Resistance: The STB80NF03L-04T4 features an exceptionally low on-resistance (R<sub>DS(on)) of just 0.0035 ohms, which enhances its efficiency by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (I<sub>D) of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • 100% Avalanche Tested: Ensuring robustness and reliability, each device is guaranteed to withstand stressful conditions through avalanche testing.
  • Low Gate Charge: The device has a low gate charge (Q<sub>g), which results in faster switching performance and reduced switching losses.
  • High Threshold Voltage: The MOSFET is designed with a high threshold voltage (V<sub>th) to prevent unintentional turn-on of the device.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control
  • Power Management Functions
  • High Efficiency Switching Circuits

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 80A Power Dissipation (P<sub>D) 180W Operating Temperature Range -55°C to 175°C

The STB80NF03L-04T4 MOSFET combines performance with durability, making it a top choice for engineers and designers seeking a reliable component for their power management and conversion applications. STMicroelectronics' commitment to quality ensures that this MOSFET will deliver consistent performance and contribute to the longevity of the end product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8647 $52.7823
21+ $4.8121 $101.0541
33+ $4.6617 $153.8361
45+ $4.5113 $203.0085
58+ $4.3610 $252.9380
77+ $3.9098 $301.0546
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,521 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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